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□ 高氘含量晶體
□ 無靜態(tài)雙折射
□ 無光折變損傷
□ 抗潮解
□ 優(yōu)異的電光特性
□ 高消光比
□ 高損傷閾值
□ 低1/4波電壓
□ 高透過率
□ 無密封劑和粘合劑
□ 緊湊設(shè)計(jì)
□ 易于調(diào)節(jié)
[ EOD-5Ga]
型號/ Type
EOD-5Ga
外部尺寸/ External Dimension
Ф15×18mm
通光孔徑/ Clear Aperture
Ф5mm
> 98%
波前畸變/ Wavefront Distortion@633nm
<
λ/8
靜態(tài)消光比/ Static Extinction
Ratio@1064nm
> 5000:1
λ/4電壓/ λ/4
Voltage@1064nm
3200V+/-200V
電容/Capacitance
2.0 pF
抗光傷閾值/ Laser Induced Damage
Threshold
500MW/cm2@1064nm,10ns,10Hz
[ EOD-8Ga]
型號/ Type
EOD-8Ga
外部尺寸/ External Dimension
Ф19×24mm
通光孔徑/ Clear Aperture
Ф8 mm
> 98%
波前畸變/ Wavefront Distortion@633nm
<
λ/8
靜態(tài)消光比/ Static Extinction
Ratio@1064nm
> 5000:1
λ/4電壓/ λ/4
Voltage@1064nm
3200V+/-200V
電容/Capacitance
4.5 pF
抗光傷閾值/ Laser Induced Damage
Threshold
500MW/cm2@1064nm,10ns,10Hz
[ EOD-8Sh]
|
型號/ Type |
EOD-8Sh |
|
外部尺寸/ External Dimension |
Ф19×25mm |
|
通光孔徑/ Clear Aperture |
Ф8 mm |
|
> 98.5% |
|
|
波前畸變/ Wavefront Distortion@633nm |
< λ/8 |
|
靜態(tài)消光比/ Static Extinction Ratio@1064nm |
> 7000:1 |
|
λ/4電壓/ λ/4 Voltage@1064nm |
3000V+/-200V |
|
電容/Capacitance |
4.5 pF |
|
抗光傷閾值/ Laser Induced Damage Threshold |
750MW/cm2@1064nm,10ns,10Hz |
型號/ Type
EOD-10Ga
外部尺寸/ External Dimension
Ф25.4×32mm
通光孔徑/ Clear Aperture
Ф10 mm
> 98%
波前畸變/ Wavefront Distortion@633nm
<
λ/8
靜態(tài)消光比/ Static Extinction
Ratio@1064nm
> 5000:1
λ/4電壓/ λ/4
Voltage@1064nm
3200V+/-200V
電容/Capacitance
5.5 pF
抗光傷閾值/ Laser Induced Damage
Threshold
500MW/cm2@1064nm,10ns,10Hz
[EOD-10GPa]
|
型號/ Type |
EOD-10GPa |
|
外部尺寸/ External Dimension |
Ф25.4×39mm |
|
通光孔徑/ Clear Aperture |
Ф10 mm |
|
> 98% |
|
|
波前畸變/ Wavefront Distortion@633nm |
< λ/8 |
|
靜態(tài)消光比/ Static Extinction Ratio@1064nm |
> 5000:1 |
|
λ/4電壓/ λ/4 Voltage@1064nm |
3200V+/-200V |
|
電容/Capacitance |
5.5 pF |
|
抗光傷閾值/ Laser Induced Damage Threshold |
500MW/cm2@1064nm,10ns,10Hz |
[EOD-13Ga]
|
型號/ Type |
EOD-13Ga |
|
外部尺寸/ External Dimension |
Ф25.3×42.5mm |
|
通光孔徑/ Clear Aperture |
Ф13mm |
|
> 98% |
|
|
波前畸變/ Wavefront Distortion@633nm |
< λ/8 |
|
靜態(tài)消光比/ Static Extinction Ratio@1064nm |
> 5000:1 |
|
λ/4電壓/ λ/4 Voltage@1064nm |
3200V+/-200V |
|
電容/Capacitance |
8 pF |
|
抗光傷閾值/ Laser Induced Damage Threshold |
500MW/cm2@1064nm,10ns,10Hz |
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